高寅露，女，中共党员，讲师。毕业于大连理工大学物理学院，获得理学博士学位。2023年12月入职江苏大学物理与电子工程学院。
Email: gaoyl@ujs.edu.cn

研究领域与招生专业
研究领域：计算凝聚态物理（半导体异质结、材料辐照效应、自旋动力学）
招生专业：物理学

科研项目
1. 国防基础科研核科学挑战专题子课题(TZ2018004)：材料与化学前沿科学研究，参与；
2. 国家自然科学基金面上项目(11874097)：二维高温铁磁体的理论设计与自旋调控，参与；
3. 国家自然科学基金面上项目(12274050)：基于机器学习的二维非范德华自旋电子学材料的逆向设计，参与；

学术论文与专著
学术论文
1. Y. Gao, X. Jiang, Z. Qiu, J. Zhao. Photoexcitation induced magnetic phase transition and spin dynamics in antiferromagnetic MnPS3 monolayer, npj Comput. Mater. 9, 107 (2023)
2. Y. Gao, Q. Liu, X. Jiang, J. Zhao. Proximity coupling induced significantly enhanced Curie temperature in van der Waals CrSBr/MoTe2 heterostructure, Appl. Phys. Lett. 121, 16 162402 (2022)
3. Y. Gao, Q. Liu, Y. Zhu, X. Jiang, J. Zhao. Magnetic field modulated photoelectric devices in ferromagnetic semiconductor CrXh (X = S/Se, h = Cl/Br/I) van der Waals heterojunctions, Appl. Phys. Lett. 119, 3 032103 (2021)
4. Y. Gao, D. Sun, X. Jiang, J. Zhao. Point defects in group III nitrides: A comparative first-principles study, J. Appl. Phys. 125, 21 215705 (2019)
5. Y. Gao, D. Sun, X. Jiang, J. Zhao. Ab initio analytic calculation of point defects in AlGaN/GaN heterointerfaces, J. Phys.: Condens. Matter 33, 3 035002 (2020)
6. Y. Gao, K. Cheng, X. Jiang, J. Zhao. Interface Engineering of Transition Metal Dichalcogenide/GaN heterostructures: Modified Broadband for Photoelectronic Performance, Chin. Phys. B, 31, 117304 (2022)
7. R. Min‡, Y. Gao‡, X. Jiang, et al. Enhancement in the thermoelectric performance of ZrNiSn-based alloys through extra Zr-rich nanoprecipitates with superstructures, Chem. Eng. J. 464, 142531 (2023)
8. C. Xie‡, S. Jiang‡, Y. Gao ‡, M. Hong, S. Pan, J. Zhao, Y. Zhang. Giant Thickness-Tunable Bandgap and Robust Air Stability of 2D Palladium Diselenide, Small, 16, 2000754 (2020)
9. D. Sun, Y. Gao, X. Jiang, J. Zhao. Matching vacancy formation energy and defect levels with the density of amorphous Ga2O3, J. Mater. Sci., 55: 9394 (2020)
10. D. Sun, Y. Gao, X. Jiang, J. Zhao. Defect stability and electronic structure of doped β-Ga2O3: A comprehensive ab initio study, J. Alloys Compd., 794: 374 (2019)
11. Y. Zhu, Y. Gao, X. Jiang, J. Zhao. Effects of vacancy defects on the magnetic properties of vanadium diselenide monolayers: a first principle investigation, Phys. Chem. Chem. Phys., 24, 17615 (2022)
12. Y. Wang, Y. Gao, X. Jiang, J. Zhao. Charge effect on the irradiation damage of silicon: Insight from phase-field simulation, Mater. Today Commun., 24, 101187 (2020)
13. J. Li, Y. Gao, X. Zhang, L. Chen, Y. Ma, L. Yang, Q. Liu, X. Jiang, B. Liu. ACS Appl. Electron. Mater., 4, 5267 (2022)

表彰奖励
1.2023年辽宁省优秀毕业生